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| FMMT459 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR | |||
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FMMT459
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base
breakdown voltage
Emitter-base
breakdown voltage
(reverse blocking)
Collector-emitter
cut-off current
Collector-base
cut-off current
Emitter-base
cut-off current
Static forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter turn-on
voltage
Transition frequency
Symbol
BVCBO
BVCEV
BVCEO
BVEBO
BVECV
ICES
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Min. Typ. Max.
500 700
500 700
450 500
6
8.1
6
8.1
100
100
100
50 120
70
60
75
70
90
0.76 0.9
0.71 0.9
50
Output capacitance
Turn-on time
Cobo
t(ON)
5
113
Turn-off time
t(OFF)
3450
NOTES:
* Measured under pulsed conditions. Pulse width = 300â®s; duty cycle <2%
Unit Conditions
V IC = 100â®A
V IC = 10â®A,
0.3V > VBE > -1V
V IC = 10mA*
V IE = 100â®A
V IC = 1â®A,
0.3V > VBC > -6V
nA VCE=450V
nA VCB=450V
nA VEB=5V
IC = 30mA, VCE = 10V
IC = 50mA*, VCE = 10V
mV IC = 20mA, IB = 2mA*
mV IC = 50mA, IB = 6mA*
V IC = 50mA, IB = 5mA*
V IC = 50mA, VCE = 10V*
MHz
PF
ns
ns
IC = 10mA, VCE = 20V
f = 20MHZ
VCB = 20V, f = 1MHZ
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
IC = 50mA, VC = 100V
IB1 = 5mA, IB2 = 10mA
Note: For high voltage applications, the appropriate industry sector guidelines should be
considered with regards to voltage spacing between Terminals.
Issue 5 - August 2005
4
© Zetex Semiconductors plc 2005
www.zetex.com
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