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FMMT458TA Datasheet, PDF (4/7 Pages) Diodes Incorporated – 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
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FMMT458
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min
Typ
400
—
400
—
7
—
—
—
—
—
—
—
100
100
—
15
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
—
Base-Emitter Turn-On Voltage(Note 9)
Base-Emitter Saturation Voltage(Note 9)
Output Capacitance
VBE(on)
—
VBE(sat)
—
Cobo
—
Transition Frequency
fT
50
Turn-On Time
Turn-Off Time
ton
—
toff
—
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
—
—
—
—
—
135
2260
Max
—
—
—
100
100
100
300
200
500
0.9
0.9
5
—
—
—
Unit
V
V
V
nA
nA
nA
—
mV
mV
V
V
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 1mA
IE = 100µA
VCB = 320V
VEB = 5.6V
VCE= 320V
IC = 1mA, VCE = 10V
IC = 50mA, VCE = 10V
IC = 100mA, VCE = 10V
IC = 20mA, IB = 2mA
IC = 50mA, IB = 6mA
IC = 50mA, VCE = 10V
IC = 50mA, IB = 5mA
VCB = 20V. f = 1MHz
VCE = 20V, IC = 10mA,
f = 20MHz
VCE=100V, IC =50mA
IB1 = 5mA, IB2 = -10mA
FMMT458
Document number: DS33088 Rev. 6 - 2
4 of 7
www.diodes.com
January 2013
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