DXT2013P5_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 100V PNP MEDIUM POWER TRANSISTOR PowerDI®5

A Product Line of
Diodes Incorporated
DXT2013P5
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage (Note 7)
Base-Emitter Saturation Voltage (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
DC Current Gain (Note 7)
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CER
R≤1kΩ
I_EBO
Min
-140
-100
-7.0
⎯
⎯
⎯
V_CE(sat)
⎯
V_BE(sat)
⎯
V_BE(on)
⎯
100
100
h_FE
25
15
⎯
Typ
-160
-115
-8.1
<1
⎯
<1
⎯
<1
-20
-70
-120
-240
-985
-920
250
200
50
30
5
Transition Frequency
Output Capacitance
Switching Times
Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
f_T
C_obo
t_on
t_off
⎯
125
⎯
42
⎯
42
⎯
540
Max
⎯
⎯
⎯
-20
-0.5
-20
-0.5
-10
-30
-90
-150
-340
-1100
-1050
⎯
300
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
μA
nA
mV
mV
mV
⎯
MHz
pF
ns
ns
Test Condition
I_C = -100μA
I_C = -10mA
I_E = -100μA
V_CB = -100V
V_CB = -100V, T_amb = 100 °C
V_CB = -100V
V_CB = -100V, T_amb = 100 °C
V_EB = -6V
I_C = -0.1A, I_B = -10mA
I_C = -1A, I_B = -100mA
I_C = -2A, I_B = -200mA
I_C = -4A, I_B = -400mA
I_C = -4A, I_B = -400mA
V_CE = -4V, I_C = -2A
I_C = -10mA, V_CE = -1V
I_C = -1A, V_CE = -1V
I_C = -3A, V_CE = -1V
I_C = -4A, V_CE = -1V
I_C = -10A, V_CE = -1V
I_C = -100mA, V_CE = -10V,
f = 50MHz
V_CB = -10V, f = 1MHz
I_C = -1A, V_CC = -10V,
I_B1 = I_B2 = -100mA
PowerDI is a registered trademark of Diodes Incorporated.
DXT2013P5
Document number: DS32010 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated