DT451AN Datasheet, PDF (4/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

30
10
LIMIT
R ^DS(ON)
1
100 _s
1ms
10ms
100ms
10s ^1s
dc
0.1
0.01
V_GS = 10V
SINGLE PULSE
R_QJA = 42 C
T_A = 25 C
0.1
1
10
50
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5, Maximum Safe Operating Area
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
R_QJA (t) = r(t) b R_QJA
R_QJA = See Note 1c
P_(pk)
t₁
t₂
T_J - T_A = P_PK b R_QJA(t)
Duty Cycle, D = t₁/t₂
0.01
0.1
1.0
10
100
t₁, SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
1000 3000
DS11606 Rev. C-4
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DS451AN