DST857BDJ_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 45V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT-963

DST857BDJ
Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min
-50
-50
-45
-6
-
-
200
-
-
-
-
-600
Typical
-100
-90
-65
-8.5
-
340
330
-70
-300
-760
-885
-670
-715
Max
-
-
-
-
-15
-
470
-175
-500
-1,000
-1,100
-780
-850
Current Gain-Bandwidth Product
fT
100
340
-
Output Capacitance
Cobo
-
2.0
-
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Unit
V
V
V
V
nA
-
mV
mV
mV
MHz
pF
Test Condition
IC = -10µA, IB = 0
IC = -10µA, IB = 0
IC = -1mA, IB = 0
IE = -1µA, IC = 0
VCB = -30V
IC = -10µA, VCE = -5V
IC = -2.0mA, VCE = -5V
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -2.0mA, VCE = -5V
IC = -10mA, VCE = -5V
VCE = -5V, IC = -10mA,
f = 100MHz
VCB = -10V, f = 1.0MHz
0.18
0.16
0.14
0.12
0.10
0.08
0.06
I_B = -2mA
I_B = -1.8mA
I_B = -1.6mA
I_B = -1.4mA
I_B = -1.2mA
I_B = -1mA
I_B = -0.8mA
I_B = -0.6mA
I_B = -0.4mA
0.04
0.02
I_B = -0.2mA
0
0
1
2
3
4
5
-V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
600
550
T_A = 150°C
500
T_A = 125°C
450
V_CE = 5V
400
T_A = 85°C
350
300
T_A = 25°C
250
200
150
T_A = -55°C
100
50
0
0
1
10
100
1,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
DST857BDJ
Document number: DS32037 Rev. 2 - 2
4 of 7
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March 2015
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