DST847BDJ_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 45V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT-963

DST847BDJ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
Min
Typical
BVCBO
50
150
BVCES
50
150
BVCEO
45
65
BVEBO
6
8.35
ICBO


hFE

220
200
300
VCE(sat)


50
122
VBE(sat)


760
880
VBE(on)
580
650
725
Current Gain-Bandwidth Product
fT
100
170
Collector-Base Capacitance
Ccbo

1.5
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
Max




15

470
125
300
1,000
1,100
750
800


Unit
V
V
V
V
nA

mV
mV
mV
MHz
pF
Test Condition
IC = 10µA, IB = 0
IC = 10µA, IB = 0
IC = 1mA, IB = 0
IE = 1µA, IC = 0
VCB = 30V
IC = 10µA, VCE = 5V
IC = 2.0mA, VCE = 5V
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 2.0mA, VCE = 5V
IC = 10mA, VCE = 5V
VCE = 5V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
DST847BDJ
Document number: DS32035 Rev. 2 - 2
4 of 7
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March 2015
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