DSS3515M_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 15V PNP LOW VCE(sat) TRANSISTOR

DSS3515M
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min Typ
-15

-15

-6

Collector Cutoff Current
ICBO


Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
IEBO


DC Current Gain
200 
hFE
150 
90

Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
VCE(sat)
RCE(sat)
VBE(sat)
VBE(on)
Cobo
fT














100 340
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max



-100
-50
-100



-25
-150
-250
500
-1.1
-0.9
10

Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA VCB = -15V, IE = 0
µA _{VCB = -15V, IE = 0, TA = +150°C}
nA V_EB = -5V, I_C = 0
VCE = -2V, IC = -10mA
 V_CE = -2V, I_C = -100mA
VCE = -2V, IC = -500mA
IC = -10mA, IB = -0.5mA
mV I_C = -200mA, I_B = -10mA
IC = -500mA, IB = -50mA
mΩ I_C = -500mA, I_B = -50mA
V I_C = -500mA, I_B = -50mA
V V_CE = -2V, I_C = -100mA
pF V_CB = -10V, f = 1.0MHz
MHz V_CE = -5V, I_C = -100mA, f = 100MHz
DSS3515M
Document number: DS31819 Rev. 4 - 2
4 of 7
www.diodes.com
May 2015
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