DSS2540M_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V NPN LOW VCE(sat) TRANSISTOR

DSS2540M
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min Typ
40

40

6

Collector Cutoff Current
ICBO


Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
IEBO


DC Current Gain
200 
hFE
150 
50

Collector-Emitter Saturation Voltage
VCE(sat)








Collector-Emitter Saturation Resistance
RCE(sat)


Base-Emitter Saturation Voltage
VBE(sat)


Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
VBE(on)


Output Capacitance
Cobo


Current Gain-Bandwidth Product
fT
250 300
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max



100
50
100



50
100
200
250
500
1.2
1.1
6

Unit
Test Condition
V I_C = 100µA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 100µA, I_C = 0
nA VCB = 30V, IE = 0
µA _{VCB = 30V, IE = 0, TA = +150°C}
nA V_EB = 5V, I_C = 0
VCE = 2V, IC = 10mA
 V_CE = 2V, I_C = 100mA
VCE = 2V, IC = 500mA
IC = 10mA, IB = 0.5mA
mV ^{IC = 100mA, IB = 5mA}
IC = 200mA, IB = 10mA
IC = 500mA, IB = 50mA
mΩ I_C = 500mA, I_B = 50mA
V I_C = 500mA, I_B = 50mA
V V_CE = 2V, I_C = 100mA
pF V_CB = 10V, f = 1.0MHz
MHz V_CE = 5V, I_C = 100mA, f = 100MHz
DSS2540M
Document number: DS31820 Rev. 4 - 2
4 of 7
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May 2015
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