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DMTH4007SPDQ Datasheet, PDF (4/8 Pages) Diodes Incorporated – 40V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMTH4007SPDQ
50
VGS = 10V
VGS = 5.0V
40
30
VDS = 5.0V
25
VGS = 6.0V
30
20
VGS = 4.5V
10
VGS = 4.0V
VGS = 3.5V
0
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
20
15
10
5
0
0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
10
9
8
VGS = 10V
7
6
5
4
0 5 10 15 20 25 30 35 40 45 50
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
50
45
40
I D = 17A
35
30
25
20
15
10
5
0
2 4 6 8 10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.015
0.013
0.011
2.2
TA = 175 C
2
TA = 150C
TA = 125C
1.8
TA = 85C
1.6
VGS = 10V
ID = 20A
0.009
0.007
1.4
TA = 25C
1.2
TA = -55C
1
0.005
0.8
0.003
0
VGS = 10V
5
10
15
20
25
30
I D, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
DMTH4007SPDQ
Document number: DS38393 Rev. 1 - 2
4 of 8
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November 2015
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