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DMS2095LFDB_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE
DMS2095LFDB
10.0
VGS = -4.5V
8.0
6.0
MOSFET Characteristics
VGS = -2.0V
VGS = -2.5V
10
VDS = -5.0V
9
8
VGS = -3.0V
7
VGS = -4.0V
6
5
4.0
VGS = -1.5V
4
3
2.0
0.0
0
VGS = -1.2V
VGS = -1.0V
0.5
1
1.5
2
2.5
3
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
TA = 150°C
1
TA = 125°C
TA = 85°C
TA = 25°C
0
TA = -55°C
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.2
0.18
0.1
0.09
VGS = -4.5V
0.16
0.14
0.12
0.1
0.08
VGS = -1.8V
VGS = -2.5V
0.08
0.07
0.06
0.05
0.04
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
0.06
0.04
VGS = -4.5V
0.03
0.02
0.02
0.01
0
1 2 3 4 5 6 7 8 9 10
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
VGS = -4.5V
ID = -3A
1.2
VGS = -2.5V
ID = -1A
0
0
0.12
1 2 3 4 5 6 7 8 9 10
ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
0.1
0.08
VGS = -2.5V
ID = -1A
0.06
VGS = -4.5V
ID = -3A
0.8
0.04
0.02
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
4 of 7
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April 2014
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