DMP3037LSS_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

0.05
0.045
0.04
0.035
0.03
V_GS = -4.5V
I_D = -5A
0.025
0.02
0.015
V_GS = -10V
I_D = -7A
0.01
0.005
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
20
18
16
14
12
T_A = 150C
10
T_A = 125C
8
T_A = 85C
6
T_A = 25C
T_A = -55C
4
2
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
-V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
6
V_DS = -15V
I_D = -7A
4
2
0
0 2 4 6 8 10 12 14 16 18 20
Q_g, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
DMP3037LSS
2
1.8
1.6
I_D = -1mA
1.4
I_D = -250µA
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
1000
C_iss
100
C_oss
C_rss
10
0
5
10
15
20
25
30
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
R_DS(on)
Limited
10
DC
1
P_W = 10s
P_W = 1s
P_W = 100ms
P_W = 10ms
0.1 _{TJ(max) = 150°C}
T_A = 25°C
P_W = 1ms
P_W = 100µs
V_GS = -8V
Single Pulse
0.01 ^{DUT on 1 * MRP Board}
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DMP3037LSS
Document number: DS36775 Rev. 2 - 2
4 of 6
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April 2014
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