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| DMP3017SFK_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET | |||
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0.02
0.018
VGS = -10V
0.016
0.014
0.012
TA = 125ï°C
TA = 150ï°C
TA = 85ï°C
0.01
TA = 25ï°C
0.008
0.006
TA = -55ï°C
0.004
0.002
00
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.03
0.025
0.02
0.015
VGS = -4.5V
ID = -5A
0.01
0.005
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (ï°C)
Figure 7 On-Resistance Variation with Temperature
30
25
20
15
TA= 150ï°C
10
TA= 125ï°C
TA= 85ï°C
5
TA= 25ï°C
TA= -55ï°C
00
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
DMP3017SFK
1.8
1.6
1.4
VGS = -4.5V
ID = -5A
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (ï°C)
Figure 6 On-Resistance Variation with Temperature
3
2.8
2.6
2.4
2.2
2
1.8
-ID = 1mA
1.6
1.4
-ID = 250µA
1.2
1
0.8
0.6
0.4
0.2
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
Ciss
1000
Coss
Crss
100
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DMP3017SFK
Document number: DS37310 Rev. 4 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
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