DMP3010LK3_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

DMP3010LK3
2.5
2.0
1.5
I_D = -1mA
I_D = -250µA
1.0
0.5
0
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10,000
C_iss
1,000
C_oss
C_rss
30
25
20
15
T_A = 25°C
10
5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
100,000
10,000
1,000
T_A = 150°C
T_A = 125°C
100
T_A = 85°C
f = 1MHz
100
0
10
4
8
12
16
20
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Total Capacitance
8
V_DS = -15V
I_D = -10A
6
4
2
00
20 40 60 80 100 120 140
Q_g, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
10
1
T_A = 25°C
0
5
10
15
20
25 30
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Leakage Current vs. Drain-Source Voltage
100
90
80
70
Single Pulse
R_JA = 72°C/W
R_JA(t) = r(t) * R_JA
T_J - T_A = P * R_JA
60
50
40
30
20
10
0
0.001 0.01 0.1
1
10 100 1,000
t1, PULSE DURATION TIME (sec)
Figure 12 Single Pulse Maximum Power Dissipation
DMP3010LK3
Document number: DS35716 Rev. 5 - 2
4 of 7
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July 2013
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