DMNH6012LK3 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

0.03
0.025
0.02
0.015
V_GS=4.5V, I_D=25A
0.01
0.005
V_GS=10V, I_D=25A
0
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
25
V_GS=0V, T_A=125℃
20
V_GS=0V, T_A=150℃
15 ^VGS^{=0V, T}A^=175℃
V_GS=0V,
T_A=85℃
10
V_GS=0V,
T_A=25℃
5
V_GS=0V,
T_A=-55℃
0
0
0.3
0.6
0.9
1.2
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10000
f=1MHz
1000
100
C_iss
C_oss
C_rss
DMNH6012LK3
3
2.8
2.6
2.4
2.2
I_D=1mA
2
1.8
I_D=250μA
1.6
1.4
1.2
1
0.8
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100000
10000
1000
175℃
150℃
125℃
85℃
100
10
25℃
1
0.1
0
10
20
30
40
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
10
8
6
V_DS=30V, I_D=25A
4
2
10
0 5 10 15 20 25 30 35 40
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
0
0 5 10 15 20 25 30 35 40
Q_g (nC)
Figure 12. Gate Charge
DMNH6012LK3
Document number: DS37381 Rev. 3 - 2
4 of 7
www.diodes.com
October 2015
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