DMN4026SSD Datasheet, PDF (4/6 Pages) Diodes Incorporated – Low On-Resistance

DMN4026SSD
0.04
0.035
0.03
V_GS = 4.5V
I_D = 5A
0.025
0.02
0.015
V_GS = 10V
I_D = 10A
0.01
0.005
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
30
25
3
2.8
2.6
2.4
2.2
2
1.8
I_D = 250µA
I_D = 1mA
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
20
T_A = 150°C
15
T_A = 125°C
T_A = 85°C
10
T_A = 25°C
T_A = -55°C
5
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1 _{D = 0.9}
D = 0.7
D = 0.5
D = 0.3
0.1 _{D = 0.1}
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
R_θJA(t) = r(t) * R_θJA
R_θJA = 94°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 10 Transient Thermal Resistance
100
1,000
DMN4026SSD
Document number: DS36351 Rev. 4 - 2
4 of 6
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June 2014
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