DMN3016LDN Datasheet, PDF (4/7 Pages) Diodes Incorporated – Low On-Resistance

3
2.5
2
I_D = 1mA
1.5
1
I_D = 250µA
0.5
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (℃)
Figure 7 Gate Theshold Variation vs Junction
Temperature
10000
f=1MHz
1000
100
C_iss
C_oss
C_rss
10
0
2 4 6 8 10 12 14 16 18 20
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
100
R_DS(ON)
Limited
10
DMN3016LDN
30
25
20
15
10
V_GS = 0V, T_A = 25^oC
5
0
0
0.2 0.4 0.6 0.8
1
1.2
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs Current
10
9
8
7
V_DS = 15V, I_D =12A
6
5
4
3
2
1
0
0
5
10
15
20
25
Qg (nC)
Figure 10 Gate Charge
DC
1
P_W =10s
P_W =1s
P_W =100ms
0.1
0.01
T_J(Max)=150℃
T_A=25℃
V_GS=10V
Single Pulse
P_W =10ms
P_W =1ms
DUT on 1*MRP Board
P_W =100µs
0.1
1
10
100
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN3016LDN
Document number: DS37307 Rev. 2 - 2
4 of 7
www.diodes.com
January 2015
© Diodes Incorporated