DMG6301UDW_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – 25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

1.5
1.2
V_GS = 4.5V
I_D = 500mA
V_GS = 8V
0.9
I_D = 800mA
0.6
0.3
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
1
0.8
0.6
T_A = 150°C
0.4
T_A = 125°C
T_A = 85°C
0.2
T_A = 25°C
T_A = -55°C
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
6
4
V_DS = 5V
I_D = 200mA
2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Q_g, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMG6301UDW
1.2
1.1
1
0.9
I_D = 1mA
I_D = 250µA
0.8
0.7
0.6
0.5
0.4
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
100
f = 1MHz
C_iss
10
C_oss
C_rss
1
0
5
10
15
20
25
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DMG6301UDW
Document number: DS36288 Rev. 1 - 2
4 of 6
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February 2014
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