DMG3415U_15 Datasheet, PDF (4/6 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE MOSFET

DMG3415U
1.2
0.9
0.6
I_D = 1mA
I_D = 250µA
0.3
0
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100,000
10,000
1,000
100
T_A = 150°C
T_A = 125°C
T_A = 85°C
10
T_A = 25°C
T_A = -55°C
1
2 4 6 8 10 12 14 16 18 20
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
4.5
4
3.5
V_DS = -10V
I_D = -4.5A
3
2.5
2
1.5
1
0.5
0
01
23 4 5 6 7 8
Q_g, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
9 10
20
18
16
14
12
10
8
T_A = 25°C
6
4
2
0
0.2
0.4
0.6
0.8
1
1.2
V_SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100
R_DS(o n )
Limited
10
DC
1
P_W=10s
P_W=1s
P_W=100ms
P_W=10ms
0.1
T_J(Max)=150℃
T_A=25℃
V_GS=10V
Single Pulse
P_W=1ms
P_W=100us
DUT on 1*MRP board
0.01
0.1
1
10
100
V_DS, Drain-Source Voltage (V)
Fig. 10 SOA, Safe Operation Area
DMG3415U
Document number: DS31735 Rev. 12 - 2
4 of 6
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January 2015
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