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DMC1016UPD Datasheet, PDF (4/10 Pages) Diodes Incorporated – COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Typical Characteristics - N-CHANNEL
50.0
45.0
40.0
35.0
30.0
VGS = 2.5V
VGS = 3.0V
VGS = 3.5V
VGS = 4.0V
VGS = 2.0V
25.0
20.0
15.0
VGS = 4.5V
VGS = 8V
10.0
VGS = 1.5V
5.0
VGS = 1.2V
0.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.015
DMC1016UPD
30
VDS= 5V
25
20
15
10
5
0
0
0.1
TJ = 125oC
TJ = 150oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.012
0.009
0.006
VGS = 2.5V
VGS = 4.5V
0.08
0.06
ID = 11..8A
0.04
0.003
0.02
0
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
0.02
0.018 VGS= 4.5V
ID = 9.8A
0
012345678
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.5
0.016
2
0.014
TJ = 150oC
TJ = 125oC
0.012
1.5
VGS = 2.5V, ID = 10A
0.01
0.008
0.006
0.004
TJ = 85oC
TJ = 25oC
1
TJ = -55oC
0.5
VGS = 4.5V, ID = 15A
0.002
0
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
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DMC1016UPD
Document number: DS37799 Rev. 2 - 2
4 of 10
www.diodes.com
March 2016
© Diodes Incorporated