APT13003D_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 450V NPN HIGH VOLTAGE POWER TRANSISTOR

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Diodes Incorporated
APT13003D
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Transfer Static Ratio (Note 6)
Symbol
BVCES
BVCEO
BVEBO
ICEV
hFE
Min
Typ
700

450

9



16

5.0

Collector-Emitter Saturation Voltage (Note 6)
VCE(sat)




Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
Transition Frequency
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
VBE(sat)
Cob
fT
ton
ts
tf





18
4







Note:
6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max



10
30
25
0.3
0.4
1.0
1.2


0.7
3.0
0.35
Unit
V
V
V
µA

V
V
pF
MHz
µs
Test Condition
IC = 100µA, VBE = 0V
IC = 100µA
IE = 100µA
VCE = 700V, VBE = -1.5V
IC = 0.5A, VCE = 2V
IC = 1.0A, VCE = 2V
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
VCB = 10V, f = 0.1MHz
IC = 0.1A, VCE = 10V
IC = 1A, VCC = 125V, IB1 = 0.2A,
IB2 = -0.2A
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1.6
1.4
I =200mA
B
I =180mA
B
I =160mA
B
I =140mA
1.2
B
I =120mA
B
I =100mA
1.0
B
I =80mA
B
0.8
I =60mA
B
I =40mA
0.6
B
0.4
I =20mA
B
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector-Emitter Voltage V (V)
CE
Static Characteristics
35
30
25
20
15
10
5
0
0.01
T =125oC
J
T =25oC
J
V =2V
CE
0.1
1
10
Collector Current I (A)
C
DC Current Gain
10
H =5
FE
1
T =125^oC
J
T =25oC
J
0.1
0.01
0.1
1
10
Collector Current I (A)
C
Collector-Emitter Saturation Region
1.20
1.05
0.90
0.75
0.60
0.1
APT13003D
Datasheet Number: DS36347 Rev. 2 - 2
4 of 7
www.diodes.com
T =25oC
J
H =5
FE
T =125oC
J
1
10
Collector Current I (A)
C
Base-Emitter Saturation Voltage
October 2014
© Diodes Incorporated