AP7217D Datasheet, PDF (4/9 Pages) Diodes Incorporated – 1.2V 600mA CMOS LDO

AP7217D
1.2V 600mA CMOS LDO
Electrical Characteristics
(T_A = 25°C, C_IN = 1µF, C_OUT = 1µF, V_IN=5V, unless otherwise noted)
Symbol
Parameter
Test Conditions
I_Q
Quiescent Current I_O = 0mA
V_OUT
Output Voltage
Accuracy
V_OUT Temperature
Coefficient
I_O = 30mA
-40°C to 85°C, I_OUT = 30mA
V_DROPOUT
I_OUT
Dropout Voltage
Maximum Output
Current
I_OUT = 600mA, V_OUT = 1.2V
I_LIMIT
I_SHORT
ΔV_LINE
ΔV_LOAD
Current Limit
Short Circuit Current
Line Regulation
Load Regulation
(Note 4)
2.5V ≤ V_IN ≤ 5.5V; I_OUT = 30mA
1mA ≤ I_OUT ≤ 300mA
1mA ≤ I_OUT ≤ 600mA
PSRR
Power Supply
Rejection
V_IN = 4.3V+0.5Vp-pAC,
I_OUT = 50mA
F = 1KHz
Thermal Shutdown
Temperature
Min
-
1.176
-
-
600
-
-
-
-
-
Typ.
40
1.2
±100
850
-
850
200
0.2
15
30
55
150
Max Unit
60
μA
1.224 V
- ppm / ^oC
1300 mV
-
mA
-
mA
-
mA
-
%/V
35 mV
55 mV
-
dB
-
ºC
Notes:
Thermal Shutdown
Hysteresis
-
30
-
ºC
θ_JA
Thermal Resistance
Junction-to-Ambient
SOT89-3L (Note 5)
θ_JC
Thermal Resistance
Junction-to-Case
SOT89-3L (Note 5)
- 173 - ºC/W
-
51
- ºC/W
4. Regulation is measured at constant junction temperature by low duty cycle pulse testing.
5. Test condition for SOT89-3L: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper, with minimum recommended pad layout,
no air flow.
Typical Application
AP7217D Rev. 2
4 of 9
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FEBRUARY 2009
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