AP7217C Datasheet, PDF (4/9 Pages) Diodes Incorporated – 1.25V 600mA CMOS LDO

AP7217C
1.25V 600mA CMOS LDO
Electrical Characteristics
(TA = 25°C, CIN= 1µF, COUT= 1µF, VEN= VIN, unless otherwise noted)
Symbol
Parameter
Test Conditions
I_Q
I_STB
V_OUT
Quiescent Current
Standby Current
Output Voltage
Accuracy
V_OUT Temperature
Coefficient
I_O = 0mA
V_EN = Off
V_IN = 5.0V
I_O = 30mA, V_IN = 5V
-40°C to 85°C, I_OUT = 30mA
Min Typ. Max Unit
-
40 60
µA
2
5
µA
1.225 1.25 1.275 V
±100
ppm / ^oC
V_DROPOUT
Dropout Voltage
I_OUT = 100mA, V_OUT = 1.25V
I_OUT = 600mA, V_OUT = 1.25V
1250
mV
2000
I_OUT
Maximum Output
Current
V_IN = 5.3V
600
mA
I_LIMIT
Current Limit
V_IN = 5.3V
750
mA
I_SHORT
Short Circuit Current V_IN = 5.3V
∆V_LINE/∆V_IN/V_OUT Line Regulation
4.3V ≤ V_IN ≤ 5.5V; I_OUT = 30mA
∆V_OUT
Load Regulation
1mA ≤ I_OUT ≤ 100mA, V_IN = 5.3V
70
mA
0.01 ±0.2 %/V
10 20 mV
PSRR
Power Supply
Rejection
V_IN = 4.3V+ 0.5Vp-pAC,
I_OUT = 50mA
F = 1KHz
55
dB
V_EH
V_EL
EN Input Threshold
Output ON
Output OFF
I_EN
Enable Pin Current
θ_JA
Thermal Resistance
Junction-to-Ambient
SOP-8L-EP (Note 3)
1.6
V
0.25 V
-0.1
0.1 µA
82
ºC/W
θ_JC
Thermal Resistance
Junction-to-Case
SOP-8L-EP (Note 3)
12
ºC/W
Notes: 3. Test condition for SOP-8L-EP: Device mounted on 2oz copper, minimum recommended pad layout on top & bottom layer with thermal vias,
double sided FR-4 PCB.
AP7217C Rev. 3
DS31424
4 of 9
www.diodes.com
OCTOBER 2009
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