AP2501M8-13 Datasheet, PDF (4/18 Pages) Diodes Incorporated – 2.5A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH

AP2501/AP2511
Electrical Characteristics (@ T_A = +25°C, V_IN = +5.0V, C_IN = 0.1µF, C_L = 1µF,unless otherwise specified.)
Symbol
V_UVLO
ΔV_UVLO
I_SHDN
I_Q
I_LEAK
I_REV
Parameter
Input UVLO
Input UVLO Hysteresis
Input Shutdown Current
Input Quiescent Current
Input Leakage Current
Reverse Leakage Current
R_DS(ON) Switch on-resistance
I_LIMIT
I_TRIG
I_SHORT
T_SHORT
V_IL
V_IH
I_LEAK-EN
I_LEAK-O
T_D(ON)
T_R
T_D(OFF)
T_F
R_FLG
I_FOH
T_BLANK
T_DIS
R_DIS
T_SHDN
T_HYS
Over-Load Current Limit (Note 7)
Current limiting trigger threshold
Short-Circuit Current Limit
Short-Circuit Response Time
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input leakage
Output leakage current
Output turn-on delay time
Output turn-on rise time
Output turn-off delay time
Output turn-off fall time
FLG output FET on-resistance
FLG Off Current
FLG Blanking Time
Discharge time
Discharge resistance (Note 8)
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Conditions (Note 7)
Min
V_IN rising
1.6
V_IN decreasing
Disabled, OUT = open
Enabled, OUT = open
Disabled, OUT grounded
Disabled, V_IN = 0V, V_OUT = 5V, I_REV at V_IN
V_IN = 5V, I_OUT = 1A
T_A = 25^oC
-40°C ≤ T_A ≤ 85°C
V_IN = 3.3V, I_OUT = 1A
T_A = 25^oC
-40°C ≤ T_A ≤ 85°C
V_IN = 5V, V_OUT = 4.5V
-40°C≤ T_A ≤85°C
2.8
Output Current Slew rate (<100A/s)
Enabled into short circuit
V_OUT = 0V to I_OUT = I_LIMIT (OUT shorted to ground)
V_IN = 2.7V to 5.5V
V_IN = 2.7V to 5.5V
2
V_IN = 5V, V_EN = 0V and 5.5V
Disabled, V_OUT = 0V
C_L = 1µF, R_LOAD = 5Ω
C_L = 1µF, R_LOAD = 5Ω
C_L = 1µF, R_LOAD = 5Ω
C_L = 1µF, R_LOAD = 5Ω
I_FLG = 10mA
V_FLG = 5V
Assertion or deassertion due to overcurrent and
over-temperature condition
4
C_L= 1µF, V_IN = 5V, disabled to V_OUT < 0.5V
V_IN = 5V, disabled, I_OUT = 1mA
Enabled
SO-8 (Note 9)
Typ
2.0
50
0.1
60
0.1
0.01
70
90
3.7
3.7
3.7
2
0.01
0.5
0.1
0.6
0.1
0.05
20
0.01
7
0.6
100
140
20
96
Max
Unit
2.4
V
mV
1.0
µA
100
µA
1.0
µA
1.00
µA
78
105
108
mΩ
135
4.6
A
A
A
µs
0.8
V
V
1.00
µA
1
µA
ms
1.5
ms
ms
0.10
ms
40
Ω
1.00
µA
15
ms
ms
Ω
C
C
C/W
θ_JA
Thermal Resistance Junction-to-
Ambient
MSOP-8 (Note 9)
MSOP-8EP (Note 10)
U-DFN3030-8 (Note 10)
U-DFN2020-6 (Note 11)
130
C/W
92
C/W
84
C/W
90
C/W
Notes:
7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
8. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when V_IN < V_UVLO). The
discharge function offers a resistive discharge path for the external storage capacitor for limited time.
9. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
10. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
11. Device mounted on 1"x1" FR-4 substrate PCB, 2oz copper, with minimum recommended padon top layer and thermal vias to bottom layer ground
AP2501/AP2511
Document number: DS35577 Rev. 6 - 2
4 of 18
www.diodes.com
March 2013
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