AP2161D Datasheet, PDF (4/18 Pages) Diodes Incorporated – 1A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH WITH OUTPUT DISCHARGE

AP2161D/AP2171D
1A SINGLE CHANNEL CURRENT-LIMITED POWER
SWITCH WITH OUTPUT DISCHARGE
Electrical Characteristics (T_A = 25^oC, V_IN = +5.0V, unless otherwise stated)
Symbol
Parameter
Test Conditions
V_UVLO Input UVLO
I_SHDN Input Shutdown Current
I_Q Input Quiescent Current
Disabled, I_OUT= 0
Enabled, I_OUT= 0
I_LEAK Input Leakage Current
Disabled, OUT grounded
I_REV Reverse Leakage Current
R_DS(ON) Switch on-resistance
I_SHORT Short-Circuit Current Limit
I_LIMIT Over-Load Current Limit
Disabled, V_IN= 0V, V_OUT= 5V, I_REV at V_IN
V_IN = 5V,
I_OUT= 1A
T_A = 25°C SOT25, MSOP-8-EP,
SO-8
DFN2018-6
-40°C ≤ T_A ≤ 85°C
V_IN = 3.3V, T_A = 25°C
I_OUT= 1A
-40°C ≤ T_A ≤ 85°C
Enabled into short circuit, C_L=22μF
V_IN= 5V, V_OUT= 4.0V, C_L=120μF,-40°C ≤ T_A
≤85°C
I_Trig
V_IL
V_IH
I_SINK
T_D(ON)
T_R
T_D(OFF)
T_F
R_FLG
T_Blank
R_DIS
T_DIS
T_SHDN
Current limiting trigger threshold Output Current Slew rate (<100A/s) , C_L=22μF
EN Input Logic Low Voltage V_IN = 2.7V to 5.5V
EN Input Logic High Voltage V_IN = 2.7V to 5.5V
EN Input leakage
V_EN = 5V
Output turn-on delay time
C_L=1μF, R_load=10Ω
Output turn-on rise time
C_L=1μF, R_load=10Ω
Output turn-off delay time
Output turn-off fall time
FLG output FET on-resistance
FLG blanking time
Discharge resistance (Note 3)
Discharge Time
C_L=1μF, R_load=10Ω
C_L=1μF, R_load=10Ω
I_FLG =10mA
C_IN=10uF, C_L=22μF
V_IN = 5V, disabled, I_OUT= 1mA
CL= 1µF, VIN = 5V, disabled to VOUT < 0.5V
Thermal Shutdown Threshold Enabled, R_load=1kΩ
T_HYS Thermal Shutdown Hysteresis
SOT25 (Note 4)
Min Typ. Max
1.6 1.9 2.5
0.5 1
45 70
0.1 1
0.1 1
95 115
90 110
140
120 140
170
1.2
1.1 1.5 1.9
2.0
0.8
2
1
0.05
0.6 1.5
0.05
0.05 0.1
20 40
4
7 15
100
0.6
140
25
170
Unit
V
μA
μA
μA
μA
mΩ
A
A
A
V
V
μA
ms
ms
ms
ms
Ω
ms
Ω
ms
°C
°C
θ_JA
Thermal Resistance Junction-to- ^{SO-8 (Note 4)}
Ambient
MSOP-8-EP (Note 5)
127
o_C/W
67
DFN2018-6 (Note 5)
70
Notes:
3. The discharge function is active when the device is disabled (when enable is de-asserted). The discharge function offers a resistive discharge path
for the external storage capacitor.
4. Device mounted on FR-4 4 substrate PCB, 2oz copper, with minimum recommended pad layout.
5. Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum recommended pad on top layer and thermal vias to bottom layer ground
plane.
AP2161D/2171D
Document number: DS32250 Rev. 1 - 2
4 of 18
www.diodes.com
June 2010
© Diodes Incorporated