AF15N50 Datasheet, PDF (4/9 Pages) Diodes Incorporated – 50V N-Channel MOSFET

Data Sheet
50V N-Channel MOSFET
AF15N50
Recommended Operating Conditions
Parameter
Thermal Resistance (Note 2)
Thermal Resistance
Symbol
_JA
_JC
Condition
Junction to
Ambient
Junction to Case
Value
50
4
Note 2: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square pad.
Unit
C/W
C/W
Electrical Characteristics
T_C=25°C, unless otherwise specified.
Static Characteristics
Parameters
Symbol
Conditions
Min Typ Max Unit
Drain to Source
Breakdown Voltage
V_DSS(BR)
V_GS=0V, I_D=0.25mA
50
V
Gate Threshold Voltage V_GS(TH) V_DS=V_GS, I_D=0.25mA 0.5
0.9
2
V
Zero Gate Voltage
Drain Current
I_DSS
V_DS=50V, V_GS=0V
1
A
Gate to Source
Leakage Current
I_GSS
V_GS=10V, V_DS=0V
±10
A
Drain to Source
On-state Resistance
R_DS(ON)
V_GS=10V, I_D=15A
V_GS=4.5V, I_D=15A
10
14.32
20
m
12
16.36
30
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4