74HCU04 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Hex inverter

74HCU04
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
V_IH
High-level Input
Voltage
V_IL
Low-level Input
Voltage
I_OH = -20μA
I_OH = -20μA
V_OH
High-level Output
Voltage
I_OH = -20μA
I_OH = -4.0mA
I_OH = -5.2mA
I_OL = 20μA
V_OL
Low-level Output
Voltage
I_OL = 20μA
I_OL = 20μA
I_OL = 4mA
I_OL = 5.2mA
I_I Input Current
V_I = GND to 5.5V
I_CC Supply Current
V_I = GND or V_CC, I_O = 0
V_CC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
6.0V
6.0V
T_A = -40°C to +85°C
Min
Max
1.7
3.6
4.8
0.3
0.9
1.2
1.8
4.0
5.5
3.84
5.34
0.2
0.5
0.1
0.33
0.33
±1
20
T_A = -40°C to +125°C
Unit
Min
Max
1.7
3.6
V
4.8
0.3
0.9
V
1.2
1.9
4.4
5.5
V
3.7
5.2
0.2
0.5
0.1
V
0.40
0.40
±1
μA
40
μA
Switching Characteristics
Symbol
Parameter
Test
Conditions
Propagation
Figure 1
t_PD
Delay A_N to Y_N C_L = 50pF
Figure 1
t_t
Transition Time
C_L = 50pF
V_CC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
T_A = +25°C
Min
Typ
Max
—
19
70
—
7
14
—
5
12
—
19
75
—
7
15
—
6
13
-40°C to +85°C -40°C to +125°C
Unit
Max
Max
90
105
18
21
ns
15
18
95
110
19
22
ns
16
19
Operating Characteristics (@T_A = +25°C, unless otherwise specified.)
Parameter
Test Conditions
V_CC = 6V
Typ
Unit
C_pd
Power Dissipation
Capacitance per Gate
f = 1MHz
10
pF
C_I
Input Capacitance V_I = V_CC – or GND
4
pF
74HCU04
Document number: DS35328 Rev. 3 - 2
4 of 9
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January 2013
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