74HCT125 Datasheet, PDF (4/8 Pages) Diodes Incorporated – QUADRUPLE 3-STATE BUFFERS OE LOW

74HCT125
Switching Characteristics
Symbol Parameter
Propagation
t_PD
Delay A_N to Y_N
Enable Time
t_EN
OE_N to Y_N
DisableTime
t_DIS
OE_N to Y_N
t_t
Transition Time
Test Conditions
Figure 1
C_L = 50pF
V_CC
4.5V
T_A = +25°C
Min
Typ
Max
—
15
25
—
15
28
—
15
25
—
5
12
-40°C to +85°C -40°C to +125°C
Unit
Max
Max
31
38
ns
35
42
ns
31
38
ns
15
18
ns
Operating Characteristics (@T_A = +25°C, unless otherwise specified.)
Parameter
Test Conditions
V_CC = 5.5V
Unit
Typ
C_pd
Power Dissipation
Capacitance per Gate
f = 1 MHz
24
pF
C_I
Input Capacitance V_I = V_CC – or GND
3.5
pF
Parameter Measurement Information
V_CC
4.5V
Inputs
V_I
1.5V
t_r/t_f
≤6ns
V_M
3.0V
TEST
t_PLZ (see Notes D and E)
t_PZL(see Notes D and F)
Condition
Vload
Vload
V_LOAD
2 X V_CC
C_L
50pF
R_L
2KΩ
V∆
10% of V_CC
Voltage Waveform
Pulse Duration
Voltage Waveform
Propagation Delay Times
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 1 MHz
C. The inputs are measured one at a time with one transition per measurement.
D. For the open drain device t_PLZ and t_PZL are the same as t_PD
E. t_PZL is measured at V_M.
D. t_PLZ is measured at V_OL +V_∆
F. A Thevenin equivalent load may be used in place of V_CC X 2 and resistor divider
Figure 1 Load Circuit and Voltage Waveforms
74HCT125
Document number: DS35336 Rev. 3 - 2
4 of 8
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January 2013
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