74HCT08 Datasheet, PDF (4/8 Pages) ON Semiconductor – Quad 2-Input AND Gate With LSTTL−Compatible Inputs High−Performance Silicon−Gate CMOS

74HCT08
Switching Characteristics
Symbol
t_PD
t_t
Parameter
Propagation
Delay A_N to Y_N
Transition Time
Test
Conditions
Figure 1
C_L = 50pF
Figure 1
C_L = 50pF
V_CC
4.5V
4.5V
T_A = +25°C
-40°C to +85°C -40°C to +125°C
Unit
Min Typ Max
Max
Max
—
14
24
30
36
ns
—
7
15
19
22
ns
Operating Characteristics (@T_A = +25°C, unless otherwise specified.)
Parameter
Test Conditions
V_CC = 5.5 V
Unit
Typ
C_pd
Power dissipation
capacitance per gate
f = 1 MHz
22
pF
C_I
Input Capacitance V_I = V_CC – or GND
4
pF
Parameter Measurement Information
V_CC
4.5V
Inputs
V_I
t_r/t_f
3.0V
3ns
V_M
1.5V
C_L
V_OH/2
Voltage Waveform
Pulse Duration
Voltage Waveform
Propagation Delay Times
Inverting and Non Inverting Outputs
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate ≤ 1 MHz.
C. Inputs are measured separately one transition per measurement.
D. t_PLH and t_PHL are the same as t_PD.
Figure 1 Load Circuit and Voltage Waveforms
74HCT08
Document number: DS35332 Rev. 3 - 2
4 of 8
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January 2013
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