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74HC08 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Quad 2-input AND gate | |||
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74HC08
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
VIH High-level Input Voltage
Test Conditions
VIL Low-level Input Voltage
IOH = -20μA
IOH = -20μA
VOH High-level Output Voltage IOH = -20μA
IOH = -4.0mA
IOH = -5.2mA
IOL = 20μA
IOL = 20μA
VOL Low-level Output Voltage IOL = 20μA
IOL = 4mA
IOL = 5.2 mA
II Input Current
VI =GND to 5.5V
ICC Supply Current
VI = GND or VCC,
IO = 0
VCC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
6.0V
6.0V
TA = -40°C to +85°C
TA = -40°C to +125°C
Unit
Min
Max
Min
Max
1.5
â
1.5
â
3.15
â
3.15
â
V
4.2
â
4.2
â
â
0.5
â
0.5
â
1.35
â
1.35
V
â
1.8
â
1.8
1.9
â
1.9
â
4.4
â
4.4
â
5.9
â
5.9
â
V
3.84
â
3.7
â
5.34
â
5.2
â
â
0.1
â
0.1
â
0.1
â
0.1
â
0.1
â
0.1
V
â
0.33
â
0.44
â
0.33
â
0.44
â
±1
â
±1
μA
â
20
â
40
μA
Switching Characteristics
Symbol
Parameter
Test
Conditions
Propagation
Figure 1
tPD
Delay AN to YN CL = 50pF
Figure 1
tt
Transition Time
CL = 50pF
Vcc
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
TA = +25°C
Min
Typ.
Max
â
25
90
â
9
18
â
7
15
â
19
75
â
7
15
â
6
13
-40°C to +85°C -40°C to +125°C
Unit
Max
Max
115
125
23
27
ns
20
23
95
110
19
22
ns
16
19
Operating Characteristics (@TA = +25°C, unless otherwise specified.)
Parameter
Test Conditions
VCC = 6V
Typ
Unit
Cpd
Power Dissipation
Capacitance per Gate
f = 1 MHz
20
pF
CI
Input Capacitance VI = VCC â or GND
4
pF
74HC08
Document number: DS35322 Rev. 3 - 2
4 of 8
www.diodes.com
January 2013
© Diodes Incorporated
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