74HC04 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Hex inverter

74HC04
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Symbol Parameter
Test Conditions
V_IH
High-level Input
Voltage
V_IL
Low-level input
voltage
I_OH = -20μA
I_OH = -20μA
V_OH
High-level Output
Voltage
I_OH = -20μA
I_OH = -4.0mA
I_OH = -5.2mA
I_OL = 20μA
I_OL = 20μA
V_OL
Low level Output
Voltage
I_OL = 20μA
I_OL = 4mA
I_OL = 5.2mA
I_I
Input Current
V_I =GND to 5.5V
I_CC Supply Current V_I = GND or V_CC, I_O=0
V_CC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
6.0V
6.0V
T_A = -40°C to +85°C
Min
Max
T_A = -40°C to +125°C
Min
Max
Unit
1.5
1.5
3.15
3.15
V
4.2
4.2
0.5
0.5
1.35
1.35
V
1.8
1.8
1.9
1.9
4.4
4.4
5.9
5.9
V
3.84
3.7
5.34
5.2
0.1
0.1
0.1
0.1
0.1
0.1
V
0.33
0.44
0.33
0.44
±1
±1
μA
20
40
μA
Switching Characteristics
Symbol
t_PD
Parameter
Test
Conditions
Propagation
Delay A_N to Y_N
Figure 1
C_L=50 pF
Figure 1
t_t
Transition time
C_L=50 pF
V_CC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
T_A = +25°C
Min
Typ
Max
—
25
90
—
9
18
—
7
15
—
19
75
—
7
15
—
6
13
-40°C to +85°C
Max
115
23
20
95
19
16
-40°C to +125°C
Unit
Max
135
27
ns
23
110
22
ns
19
Operating Characteristics (@T_A = +25°C, unless otherwise specified.)
Parameter
Test Conditions
V_CC = 6V
Typ
Unit
C_pd
Power Dissipation
Capacitance per Gate
f = 1 MHz
22
pF
C_I
Input Capacitance V_I = V_CC – or GND
4
pF
74HC04
Document number: DS35320 Rev. 3- 2
4 of 8
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January 2013
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