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| 2DA1971 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 | |||
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2DA1971
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 8)
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICBO
IEBO
hFE
Min Typ
-400
-
-400
-
-7
-
-
-
-
-
-
-
140
140
-
Collector-Emitter saturation Voltage (Note 8)
VCE(sat)
-
Base-Emitter saturation Voltage (Note 8)
Base-Emitter Turn-On Current (Note 8)
VBE(sat)
-
VBE(on)
-
Transition frequency
fT
-
Collector Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
Cobo
-
t(d)
-
t(r)
-
t(s)
-
t(f)
-
Notes: 8. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
-
-0.75
-
75
19
89
111
2165
185
Max
-
-
-
-100
-100
-100
450
400
-250
-400
-0.9
-0.8
-
-
-
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCE = -320V
VCB = -320V
VEB = -6V
IC = -20mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -100mA, IB = -10mA
IC = -200mA, IB = -40mA
IC = -100mA, IB = -10mA
IC = -200mA, VCE = -10V
IC = -50mA, VCE = -5V,
f = 50MHz
VCB = -10V, IE = 0, f = 1MHz
VCC = -200V, IC = -100mA,
IB1 = -10mA, IB2 = 20mA
2DA1971
Document number: DS35669 Rev: 2 â 2
4 of 7
www.diodes.com
August 2012
© Diodes Incorporated
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