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ZXTP26020DMF_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 20V LOW VCE(SAT ) PNP SURFACE MOUNTED TRANSISTOR
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Diodes Incorporated
ZXTP26020DMF
Electrical Characteristics (at TA = 25°C unless otherwise specified)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min Typ
-20
⎯
-20
⎯
-7
⎯
Collector Cutoff Current
Icbo
⎯
⎯
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain (Note 5)
Ices
Iebo
hFE
⎯
⎯
⎯
⎯
300
⎯
235
⎯
175
⎯
140
⎯
Collector-Emitter Saturation Voltage (Note 5)
VCE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Equivalent On-Resistance
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Output Capacitance (Note 5)
RCE(SAT)
VBE(ON)
VBE(SAT)
Cobo
Current Gain-Bandwidth Product
fT
Turn-On Time
ton
Delay Time
td
Rise Time
tr
Turn-Off Time
toff
Storage Time
ts
Fall Time
tf
Notes: 5. Short duration pulse test used to minimize self-heating effect.
⎯
125
⎯
⎯
⎯
⎯
⎯
⎯
200
⎯
⎯
60
⎯
20
⎯
40
⎯
167
⎯
140
⎯
27
Max
⎯
⎯
⎯
-100
-0.5
-100
-50
⎯
⎯
⎯
⎯
-80
-100
-155
-235
⎯
-1.1
-1.15
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
μA
nA
nA
⎯
mV
mV
mV
mV
mΩ
V
V
pF
MHz
ns
ns
ns
ns
ns
ns
Test Condition
IC = -100μA, IE = 0A
IC = -10mA, IB = 0A
IE = -100μA, IC = 0A
VCB = -20V, IE = 0A
VCB = -20V, IE = 0A,TA = 125°C
VCE = -20V, VBE = 0V
VBE = -6V, IC = 0A
VCE = -2V, IC = -100mA
VCE = -2V, IC = -0.5A
VCE = -2V, IC = -1A
VCE = -2V, IC = -1.5A
IC = -100mA, IB = -1mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -50mA
IC = -1.25A, IB = -62.5mA
IC = -1A, IB = -50mA
VCE = -5V, IC = -1A
IC = -1A, IB = -50mA
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -10V, IC = -1A
IB2 = -IB1 = -50mA
ZXTP26020DMF
Document number: DS32101 Rev. 1 - 2
3 of 6
www.diodes.com
May 2010
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