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| ZXTP2041F Datasheet, PDF (3/6 Pages) Zetex Semiconductors – SOT23 40 volt PNP silicon planar medium power transistor | |||
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A Product Line of
Diodes Incorporated
ZXTP2041F
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
DC current transfer Static ratio (Note 4)
hFE
Collector-Emitter Saturation Voltage (Note 4)
Base-Emitter Saturation Voltage (Note 4)
Base-Emitter Turn-on Voltage (Note 4)
VCE(sat)
VBE(sat)
VBE(on)
Min
Typ.
-40
-
-40
-
-5
-
-
-
-
-
-
-
300
-
300
-
250
-
160
-
30
-
-
-
-
-
-
-
-
-
-
-
Transitional Frequency
fT
150
300
Output capacitance
Delay Time
Rise Time
Switching Time
Storage Time
Fall Time
Cobo
-
t(d)
-
t(r)
-
t(s)
-
t(f)
-
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle â¤2%.
-
34.9
19.2
249
62
Max
-
-
-
-100
-100
-100
-
800
-
-
-
-0.20
-0.35
-0.50
-1.1
-1.0
-
10
-
-
-
-
Unit
V
V
V
nA
ï nA
ï nA
-
V
V
V
MHz
pF
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -30V
VEB = -4V
VCE = -30V
IC = -1mA, VCE = -5V
IC = -100mA, VCE = -5V
IC = -500mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -2A, VCE = -5V
IC = -100mA, IB = -1mA
IC = -500mA, IB = -20mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -5V
IC = -50mA, VCE = -10V,
f = 100MHz
VCB = -10V, f = 1MHz,
VCC = -10V, IC = -500mA,
IB1 = -IB2 =-25mA
ZXTP2041F
Datasheet Number: DS33721 Rev. 6 - 2
3 of 6
www.diodes.com
December 2010
© Diodes Incorporated
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