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| ZXTP2039F_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – SOT23 80 volt PNP silicon planar medium power transistor | |||
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ZXTP2039F
Electrical characteristics (@TAMB = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol
V(BR)CBO
Min.
-80
Max.
V(BR)CEV -80
Collector-emitter breakdown
voltage
V(BR)CEO -60
Emitter-base breakdown
voltage
V(BR)EBO
-5
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
ICES
ICBO
IEBO
hFE
-100
-100
-100
100
100 300
80
15
Collector-emitter saturation
VCE(sat)
-0.2
voltage
-0.3
-0.6
Base-emitter saturation voltage VBE(sat)
-1.2
Base-emitter turn-on voltage
VBE(on)
-1.0
Transition frequency
fT
150
Output capacitance
Cobo
10
Unit
V
Conditions
IC=-100â®A
V IC=-1â®A
-0.3V < VBE < 1V
V
IC=-10mA*
V IE=-100µA
nA VCE=-60V
nA VCB=-60V
nA VEB=-4V
IC=-1mA, VCE=-5V
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
V
IC=-100mA, IB=-2mA*
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
V
IC=-1A, IB=-100mA*
V
IC=-1A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
pF VCB=-10V, f=1MHz
NOTES:
* Measured under pulsed conditions. Pulse width=300â®S. Duty cycle Õ
2%
Spice parameter data is available upon request for this device
Issue 3 - August 2005
3
© Zetex Semiconductors plc 2005
www.zetex.com
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