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ZXTN4006Z Datasheet, PDF (3/5 Pages) Diodes Incorporated – 200V NPN LED DRIVING TRANSISTOR IN SOT89
A Product Line of
Diodes Incorporated
ZXTN4006Z
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Breakdown Voltage (Note 7)
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Symbol
Min
BVCEO
200
ICBO
-
IEBO
-
hFE
60
100
VBE(on)
-
t(d)
-
t(r)
-
t(s)
-
t(f)
-
t(s)
-
t(f)
-
Notes: 7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Typ
-
-
-
-
-
0.72
600
496
2730
293
56
243
Max
-
50
50
-
-
0.95
-
-
-
-
-
-
Unit
V
nA
nA
-
V
ns
ns
ns
ns
ns
ns
Test Condition
IC = 10mA
VCB = 200V
VEB = 7V
IC = 85mA, VCE = 0.25V
IC = 150mA, VCE = 0.32V
IC = 150mA, VCE = 0.32V
VCC = 160V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 0.32V
VCC = 80V, IC = 150mA,
IB1 = -IB2 = 1.5mA, VCE(ON) = 4V
Electrical Characteristics
500 125°C
400
85°C
300
25°C
200
V =0.32V
CE
100
-55°C
0
100µ
1m
10m
100m
1
I Collector Current (A)
C
h vI
FE C
1.0
V =0.32V
CE
0.8
-55°C
25°C
0.6
0.4
0.2
100µ
30
25
125°C
85°C
1m
10m
100m
1
I Collector Current (A)
C
V vI
BE(on) C
f = 1MHz
20
15
10
Cobo
5
0
100m
1
10
100
Voltage(V)
Capacitance v Voltage
ZXTN4006Z
Datasheet Number: DS35609 Rev. 1 - 2
3 of 5
www.diodes.com
January 2012
© Diodes Incorporated