ZXTN4002Z_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – 100V NPN LED DRIVING TRANSISTOR IN SOT89

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ZXTN4002Z
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Symbol
Min
BV_CBO
100
BV_CEO
100
BV_EBO
7
I_CBO
-
I_EBO
-
60
h_FE
100
V_BE(on)
-
t_(d)
-
t_(r)
-
t_(s)
-
t_(f)
-
t_(s)
-
t_(f)
-
Notes: 7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Typ
-
-
8.3
-
-
-
-
0.72
468
441
1540
251
22
204
Max
-
-
-
50
50
-
-
0.95
-
-
-
-
-
-
Electrical Characteristics @T_A = 25°C unless otherwise specified
Unit
V
V
V
nA
nA
-
V
ns
ns
ns
ns
ns
ns
Test Condition
I_C = 100µA
I_C = 10mA
I_E = 100µA
V_CB = 100V
V_EB = 7V
I_C = 85mA, V_CE = 0.15V
I_C = 150mA, V_CE = 0.2V
I_C = 150mA, V_CE = 0.2V
V_CC = 80V, I_C = 150mA,
-I_B2 = 1.5mA, V_CE(ON) = 0.2V
V_CC = 80V, I_C = 150mA,
-I_B2 = 1.5mA, V_CE(ON) = 4V
500 ^125°C
400 _85°C
V =0.2V
CE
300 25°C
200
-55°C
100
0
100µ
1m
10m
100m
1
I Collector Current (A)
C
h vI
FE C
1.0
V =0.2V
CE
0.8
-55°C
25°C
0.6
0.4
125°C
0.2
100µ
30
25
85°C
1m
10m
100m
1
I Collector Current (A)
C
V vI
BE(on) C
f = 1MHz
20
15
10
Cobo
5
0
100m
1
10
100
Voltage(V)
Capacitance v Voltage
ZXTN4002Z
Datasheet Number: DS35677 Rev. 1 - 2
3 of 5
www.diodes.com
January 2012
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