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ZXTN2040F_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
ZXTN2040F
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(base open) (Note 8)
Emitter-Base Breakdown Voltage
Collector-emitter cut-off current
Collector-base Cut-off Current
Emitter-base Cut-off Current
ON CHARACTERISTICS (Note 8)
Static Forward Current Transfer Ratio
Symbol
BVCBO
BVCEO
BVEBO
ICES
ICBO
IEBO
hFE
Min
Typ
40
â
40
â
6
â
â
â
â
â
â
â
300
300
200
â
35
Collector-Emitter Saturation Voltage
VCE(sat)
â
â
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS (Note 8)
VBE(sat)
VBE(on)
â
â
â
â
Transition Frequency
fT
150
â
Output Capacitance
Cobo
â
â
Notes: 8. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%
Max
â
â
â
100
100
100
â
900
â
â
200
300
500
1.1
1.0
â
10
Unit
Test Condition
V IC = 100µA
V IC = 10mA
V IE = 100µA
nA VCE = 30V
nA VCB = 30V
nA VEB = 5V
IC = 1mA, VCE = 5V
â IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 100mA, IB = 1mA
mV IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
V IC = 1A, IB = 100mA
V IC = 1A, VCE = 5V
MHz
pF
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
ZXTN2040F
Document number: DS33668 Rev. 3 - 2
3 of 6
www.diodes.com
August 2012
© Diodes Incorporated
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