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| ZXTN2040F Datasheet, PDF (3/5 Pages) Zetex Semiconductors – SOT23 40 volt NPN silicon planar medium power transistor | |||
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ZXTN2040F
Electrical characteristics (@TAMB = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Static forward current transfer
ratio
Symbol
V(BR)CBO
Min.
40
V(BR)CEO 40
V(BR)EBO
5
ICES
ICBO
IEBO
hFE
300
300
200
35
Max.
100
100
100
900
Collector-emitter saturation
VCE(sat)
0.2
voltage
0.3
0.5
Base-emitter saturation voltage
VBE(sat)
1.1
Base-emitter turn-on voltage
VBE(on)
1.0
Transition frequency
fT
150
Output capacitance
Cobo
10
NOTES:
* Measured under pulsed conditions. Pulse width=300â®S. Duty cycle Õ
2%
Spice parameter data is available upon request for this device
Unit
V
Conditions
IC=100â®A
V
IC=10mA*
V IE=100â®A
nA VCE=30V
nA VCB=30V
nA VEB=4V
IC=1mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
V
IC=100mA, IB=1mA*
V
V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
V
IC=1A, IB=100mA*
V
IC=1A, VCE=5V*
IC=50mA, VCE=10V
f=100MHz
pF VCB=10V, f=1MHz
Issue 2 - August 2005
3
© Zetex Semiconductors plc 2005
www.zetex.com
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