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| ZXTN2038F Datasheet, PDF (3/6 Pages) Zetex Semiconductors – SOT23 80 volt NPN silicon planar medium power transistor | |||
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ZXTN2038F
Electrical characteristics (@TAMB = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Symbol
V(BR)CBO
Min.
80
Max.
V(BR)CEV
80
Collector-emitter breakdown
voltage
V(BR)CEO 60
Emitter-base breakdown voltage V(BR)EBO 5
Collector-emitter cut-off current
ICES
Collector-base cut-off current
ICBO
Emitter-base cut-off current
IEBO
Static forward current transfer
ratio
hFE
100
100
80
30
Collector-emitter saturation
voltage
VCE(sat)
100
100
100
300
0.2
0.25
0.5
Base-emitter saturation voltage
Base-emitter turn-on voltage
Transition frequency
VBE(sat)
1.1
VBE(on)
1.0
fT
150
Output capacitance
Cobo
10
NOTES:
(*) Measured under pulsed conditions. Pulse width=300â®S. Duty cycle Õ
2%
Spice parameter data is available upon request for this device
Unit
V
Conditions
IC=100â®A
V IC=100â®A,
0.3V > VBE > -1V
V
IC=10mA (*)
V IE=100â®A
nA VCE=60V
nA VCB=60V
nA VEB=4V
IC=1mA, VCE=5V
IC=500mA, VCE=5V(*)
IC=1A, VCE=5V(*)
IC=2A, VCE=5V(*)
V
IC=100mA, IB=2mA(*)
V
V
IC=500mA,
IB=50mA(*)
IC=1A, IB=100mA(*)
V
IC=1A, IB=100mA(*)
V
IC=1A, VCE=5V(*)
IC=50mA, VCE=10V
f=100MHz
pF VCB=10V, f=1MHz
Issue 4 - January 2009
3
© Diodes Incorporated, 2008
www.zetex.com
www.diodes.com
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