ZXTN19100CFF_16 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

Thermal Characteristics and Derating Information
ZXTN19100CFF
10
V Limited
CE(sat)
50mmx50mm FR4, 2oz Cu
1
DC
1s
100m
100ms
10ms
10m
Single Pulse
T =25^OC
amb
1ms
100s
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1m
100μµ
BV =100V
(BR)CEO
Failure may occur
in this region
10μµ
1µμ
T =25OC
amb
BV =200V
(BR)CEX
0 25 50 75 100 125 150 175 200
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
80
T =25^OC
70
amb
50mmx50mm FR4, 2oz Cu
60
50 _D=0.5
40
30
D=0.2
20
Single Pulse
10
D=0.05
D=0.1
0
100μµ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
1.6
1.4
50mmx50mm FR4, 2oz Cu
1.2
1.0
25mmx25mm FR4, 2oz Cu
0.8
0.6
0.4
0.2 ^{15mmx15mm FR4, 1oz Cu}
0.0
0 20 40 60 80 100 120 140 160
Temperature (^OC)
Derating Curve
100
10
Single Pulse
T =25^OC
amb
50mmx50mm FR4,
2oz Cu
1
100μµ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN19100CFF
Document number: DS33683 Rev. 2 - 2
3 of 7
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January 2016
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