ZXTN19060CG_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR

Thermal Characteristics and Derating Information
ZXTN19060CG
V
CE(sat)
10 ^Limited
50mm x 50mm 2oz
1
DC
1s
100m
100ms
10ms
Single Pulse
T =25°C
amb
10m
100m
1
1ms
100µs
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1m
100µ
BV =60V
(BR)CEO
Failure may occur
in this region
10µ
1µ
T =25°C
amb
BV =160V
(BR)CEX
0 20 40 60 80 100 120 140 160 180
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
80
T =25°C
amb
70 50mm x 50mm 2oz
60
50 _D=0.5
40
30
D=0.2
20
Single Pulse
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
1.6
1.4
50mm x 50mm 2oz
1.2
1.0
25mm x 25mm 1oz
0.8
0.6
0.4
15mm x 15mm 1oz
0.2
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100
Single Pulse
T =25°C
amb
50mm x 50mm 2oz
10
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN19060CG
Document number: DS33682 Rev. 2 - 2
3 of 7
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November 2015
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