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| ZXTD4591E6 Datasheet, PDF (3/7 Pages) Zetex Semiconductors – DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS | |||
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ZXTD4591E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -80
V
IC=-100â®A
Collector-Emitter Breakdown
Voltage
V(BR)CEO -60
V
IC=-10mA*
Emitter-Base Breakdown Voltage V(BR)EBO -5
Collector Cut-Off Current
ICBO
Emitter Cut-Off Current
IEBO
Collector Emitter Cut-Off Current ICES
Collector-Emitter Saturation
Voltage
VCE(sat)
Base-Emitter Saturation Voltage VBE(sat)
Base-Emitter Turn-On Voltage
VBE(on)
Static Forward Current Transfer hFE
100
Ratio
100
80
15
Transition Frequency
fT
150
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
300
V
nA
nA
nA
V
V
V
V
MHz
IE=-100â®A
VCB=-60V
VEB=-4V
VCES=-60V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-100mA*
IC=-1A, VCE=-5V*
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle â¤2%
ISSUE 1 - JULY 2000
3
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