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| ZXTD09N50DE6 Datasheet, PDF (3/8 Pages) Zetex Semiconductors – DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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ZXTD09N50DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
50
Breakdown Voltage
V
IC= 100µA
Collector-Emitter
V(BR)CEO
50
Breakdown Voltage
V
IC= 10mA*
Emitter-Base Breakdown V(BR)EBO
5
Voltage
V
IE= 100µA
Collector Cut-Off Current ICBO
10
nA
VCB= 40V
Emitter Cut-Off Current IEBO
10
Collector Emitter Cut-Off ICES
10
Current
Collector-Emitter
Saturation Voltage
VCE(sat)
24
35
60
80
120
200
160
270
Base-Emitter
Saturation Voltage
VBE(sat)
940
1100
Base-Emitter Turn-On
Voltage
VBE(on)
850
1100
Static Forward Current hFE
Transfer
Ratio
200
420
300
450
200
350
75
130
20
60
Transition
fT
215
Frequency
Output Capacitance
Cobo
10
Turn-On Time
t(on)
150
Turn-Off Time
t(off)
425
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
VEB= 4V
V
C
ES
=
40V
IC= 100mA, IB= 10mA*
IC= 250mA, IB= 10mA*
IC= 500mA, IB= 10mA*
IC= 1A, IB= 50mA*
IC= 1A, IB= 50mA*
IC= 1A, VCE= 2V*
IC=10mA, VCE= 2V*
IC= 100mA, VCE=2 V*
IC= 500mA, VCE=2V*
IC= 1A, VCE= 2V*
IC= 1.5A, VCE=2 V*
IC= 50mA, VCE=10V
f= 100MHz
VCB= 10V, f=1MHz
VCC=10 V, IC= 1A
IB1=IB2=100mA
ISSUE 2 - JUNE 2001
3
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