ZXTC2061E6_16 Datasheet, PDF (3/8 Pages) Diodes Incorporated – 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR

Thermal Characteristics and Derating Information
ZXTC2061E6
R
DS(on)
10 _Limit
R
DS(on)
10 _Limit
1
DC _1s
100ms
100m
NPN
Tamb=25°C
10ms
50mm x 50mm 2oz FR4
10m
One active die
1ms
100µs
100m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1
100m
10m
DC
1s
100ms
PNP
Tamb=25°C
50mm x 50mm 2oz FR4
One active die
10ms
1ms
100µs
0.1
1
10
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
110
100
90
80
70 _D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m
Tamb=25°C
50mm x 50mm 2oz FR4
One activ die
D=0.1
D=0.05
Single Pulse
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
2.0
1.5
1.0
50mm x 50mm 2oz FR4
One activ die, t < 5 sec
25mm x 25mm 1oz FR4
two activ die
50mm x 50mm 2oz FR4
One activ die
25mm x 25mm 1oz FR4
One activ die
0.5
15mm x 15mm 1oz FR4
0.0
0
One activ die
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100
10
Single Pulse
Tamb=25°C
50mm x 50mm
2oz FR4
One active die
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTC2061E6
Document Number: DS33646 Rev: 3 - 2
3 of 8
www.diodes.com
November 2015
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