ZXMS6005DGQ Datasheet, PDF (3/9 Pages) Diodes Incorporated – 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE

ZXMS6005DGQ
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation at T_A = +25°C (Note 6)
Linear Derating Factor
Power Dissipation at T_A = +25°C (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating Temperature Range
Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
R_θJC
T_J
T_STG
Value
1.3
10.4
3.0
24
96
42
12
-40 to +150
-55 to +150
Notes:
6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
8. Thermal resistance between junction and the mounting surfaces of drain and source pins.
Units
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
°C
Recommended Operating Conditions
The ZXMS6005DGQ is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Input Voltage Range
Ambient Temperature Range
High Level Input Voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral Supply Voltage (voltage to which load is referred)
Symbol
V_IN
T_A
V_IH
V_IL
V_P
Min
Max
Unit
0
5.5
V
-40
+125
°C
3
5.5
V
0
0.7
V
0
24
V
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6005DGQ
Document number: DS37133 Rev. 1 - 2
3 of 9
www.diodes.com
April 2014
© Diodes Incorporated