ZXMN4A06G_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 40V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN4A06G
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol Min
Typ
BVDSS
40

IDSS


IGSS


VGS(th)
1

Static Drain-Source On-Resistance (Note 9)
RDS(ON)


Forward Transconductance (Notes 11)
Diode Forward Voltage (Note 9)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
gfs

8.7
VSD

0.8
trr

19.86
Qrr

16.36
Ciss

770
Coss

92
Crss

61
Qg

18.2
Qgs

2.1
Qgd

4.5
tD(on)

2.55
tr

4.45
tD(off)

28.61
tf

7.35
Notes:
9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.
Max

1
100
2
0.05
0.075

0.95












Unit
Test Condition
V I_D = 250µA, V_GS = 0V
µA V_DS = 40V, V_GS = 0V
nA V_GS = 20V, V_DS = 0V
V
ID = 250A, VDS = VGS
Ω
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.2A
S V_DS = 15V, I_D = 2.5A
V I_S = 2.5A, V_GS = 0V, T_J = +25°C
ns _{IF = 2.5A, di/dt = 100A/µs,}
nC TJ = +25°C
pF
pF ^{VDS = 40V, VGS = 0V}
f = 1MHz
pF
nC
nC ^{VDS = 30V, VGS = 10V,}
ID = 2.5A (refer to test circuit)
nC
ns
ns ^{VDD = 30V, VGS = 10V}
ns
ID = 2.5A, RG  6Ω
(refer to test circuit)
ns
ZXMN4A06G
Document number: DS33545 Rev. 4 - 2
3 of 7
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March 2015
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