ZVP4525E6_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 250V P-CHANNEL ENHANCEMENT MODE MOSFET

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 10)
Symbol Min
BVDSS
IDSS
IGSS
-250


VGS(th)
RDS(ON)
gfs
-0.8


80
Typ
-285
-30
±1
-1.5
10
13
200
Diode Forward Voltage (Note 9)
VSD

-0.86
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Reverse Recovery Time
Reverse Recovery Charge
Ciss

73
Coss

12.8
Crss

3.91
Qg

2.45
Qgs

0.22
Qgd

0.45
tD(on)

1.53
tr

3.78
tD(off)

17.5
tf

7.85
trr

205
Qrr

21
Notes:
8. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperatures.
10. For design aid only, not subject to production testing.
Max

-500
±100
-2.0
14
18

-0.97



2.45
0.31
0.63




290
29
ZVP4525E6
Unit
Test Condition
V I_D = -1mA, V_GS = 0V
nA V_DS = -250V, V_GS = 0V
nA V_GS = ±40V, V_DS = 0V
V
ID = -1mA, VDS = VGS
Ω
VGS = -10V, ID = -200mA
VGS = -3.5V, ID = -100mA
mS V_DS = -10V, I_D = -0.15A
V
IS = -200mA, VGS = 0V,
TJ = +25°C
pF
VDS = -25V, VGS = 0V
f = 1MHz
VDS = -25V, VGS = -10V,
nC I_D = -200mA (refer to
test circuit)
VDD = -30V, VGS = -10V
ns
ID = -200mA, RG = 50Ω (refer to
test circuit)
ns I_F = -200mA, di/dt = 100A/µs,
nC TJ = +25°C
ZVP4525E6
Document Number DS33411 Rev. 2 - 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated