ZVNL110G_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 100V N-CHANNEL ENHANCEMENT MODE MOSFET

1.0
V_GS = 10V
V_GS = 8.0V
V_GS = 5.0V
0.8
0.6
V_GS = 4.0V
0.4
0.2
0.0 ₀
5
V_GS = 3.0V
V_GS = 2.5V
V_GS = 2.0V
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
4
V_GS = 5V
3
2
V_GS = 10V
1
0
0
0.4
0.8
1.2
1.6
2
I_D, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
6
V_GS = 10V
5
4
T_A = 150°C
T_A = 125°C
3
T_A = 85°C
2
1
T_A = 25°C
T_A = -55°C
0
0
0.4
0.8
1.2
1.6
2
I_D, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
1
V_DS = 5V
0.8
0.6
0.4
ZVNL110G
T_A = -55°C
T_A = 25°C
T _A = 85°C
T_A = 125°C
T_A = 150°C
0.2
0
0
2
4
6
8
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
5
4
I_D = 500mA
3
I_D = 250mA
2
1
0
4
8
12
16
20
V_GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
2
1.8
1.6
V_GS = 10V
1.4
I_D = 500mA
V_GS = 5V
1.2
I_D = 250mA
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
ZVNL110G
Document number: DS33386 Rev. 4 - 2
3 of 6
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February 2015
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