ZTX1051A_15 Datasheet, PDF (3/4 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX1051A
TYPICAL CHARACTERISTICS
0.8
+25°C
0.6
0.4
0.2
IC/IB=20
IC/IB=40
IC/IB=100
1mA 10mA 100mA 1A 10A
IC-Collector Current
VCE(sat) v IC
0.8
IC/IB=100
0.6
0.4
0.2
-55°C
+25°C
+100°C
+175°C
1mA 10mA 100mA 1A 10A
IC-Collector Current
VCE(sat) v IC
700 ^VCE=2V
600
+100°C
500
400
+25°C
300
200
-55°C
100
1mA 10mA 100mA 1A 10A
IC-Collector Current
hFE v IC
VCE=2V
1.0
0.8
-55°C
0.6
+25°C
+100°C
0.4
+175°C
0.2
1mA 10mA 100mA 1A 10A
IC-Collector Current
VBE(on) v IC
1.2
IC/IB=100
1.0
0.8
-55°C
+25°C
0.6
+100°C
0.4
+175°C
0.2
1mA 10mA 100mA 1A 10A
IC-Collector Current
VBE(sat) v Ic
Single Pulse Test Tamb=25C
10
1
DC
1s
100ms
10ms
1ms
100us
0.1
0.01
100mV
1V
10V
100V
VCE - Collector Voltage
Safe Operating Area