MMDT4403_15 Datasheet, PDF (3/4 Pages) SeCoS Halbleitertechnologie GmbH – Multi-Chip Transistor

1,000
0.9
V_CE = 5V
0.8
T_A = -50°C
0.7
0.6
T_A = 25°C
0.5
T_A = 150°C
0.4
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 3 Base-Emitter Voltage
vs. Collector Current
1,000
V_CE = 5V
100
1,000
100
10
1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 4 DC Current Gain vs. Collector Current
30
f = 1MHz
20
C_ibo
10
10
5.0
C_obo
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 5 Gain Bandwidth Product vs. Collector Current
1.6
1.0
-0.1
-1.0
-10
-30
REVERSE VOLTS (V)
Fig. 6 Typical Capacitance
1.4
I_C = 10mA
1.2
I_C = 1mA
I_C = 100mA _{IC = 300mA}
I_C = 30mA
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Fig. 7 Typical Collector Saturation Region
DS30110 Rev. 10 - 2
3 of 4
www.diodes.com
MMDT4403
© Diodes Incorporated